Solid-state imaging device, manufacturing method of solid-state imaging device and electronic apparatus

摘要

A solid-state imaging device includes: a photoelectric conversion device; a wire grid polarizer provided on the photoelectric conversion device; and a conductive film electrically connecting conductive layers provided in the photoelectric conversion device to the wire grid polarizer.

主权项

1. A solid-state imaging device comprising:
a photoelectric conversion device; a wire grid polarizer provided on the photoelectric conversion device, the wire grid polarizer including a plurality of strip-shaped reflection layers formed on a base layer and a plurality of island-shaped stacks having a gap between each island-shaped stack formed on and along a length of each of the strip-shaped reflection layers, wherein each of the island-shaped stacks includes a dielectric layer formed on a respective strip-shaped reflection and an absorption layer formed on the dielectric layer, and wherein each of the plurality of strip-shaped reflection layers extends in a continuous manner beyond the gapped island-shaped stacks in a direction parallel to a principal surface of the photoelectric conversion device and in a grid having a smaller pitch than a wavelength of visible light; and a conductive film electrically connecting one or more conductive layers provided in the photoelectric conversion device to the wire grid polarizer, wherein the conductive film contacts the plurality of reflection layers, the dielectric layer, and the absorption layer of the wire grid polarizer.