发明名称 |
Gallium nitride field effect transistor with buried field plate protected lateral channel |
摘要 |
A method for fabricating a lateral gallium nitride (GaN) field-effect transistor includes forming a first and second GaN layer coupled to a substrate, removing a first portion of the second GaN layer to expose a portion of the first GaN layer, and forming a third GaN layer coupled to the second GaN layer and the exposed portion of the first GaN layer. The method also includes removing a portion of the third GaN layer to expose a portion of the second GaN layer, forming a source structure coupled to the third GaN layer. A first portion of the second GaN layer is disposed between the source structure and the second GaN layer. A drain structure is formed that is coupled to the third GaN layer or alternatively to the substrate. The method also includes forming a gate structure coupled to the third GaN layer such that a second portion of the third GaN layer is disposed between the gate structure and the second GaN layer. |
申请公布号 |
US9123799(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201314077039 |
申请日期 |
2013.11.11 |
申请人 |
Avogy, Inc. |
发明人 |
Aktas Ozgur;Kizilyalli Isik C. |
分类号 |
H01L29/735;H01L29/78;H01L29/20;H01L29/66;H01L29/40 |
主分类号 |
H01L29/735 |
代理机构 |
Kilpatrick Townsend & Stockton LLP |
代理人 |
Kilpatrick Townsend & Stockton LLP |
主权项 |
1. A method for fabricating a lateral-channel/lateral-drift GaN field-effect transistor (FET), the method comprising:
providing a substrate; providing a first GaN layer coupled to the substrate, wherein the first GaN layer has a first conductivity type; forming a second GaN layer coupled to the first GaN layer, wherein the second GaN layer has a second conductivity type; removing a portion of the second GaN layer to expose a portion of the first GaN layer; forming a third GaN layer coupled to the second GaN layer and the exposed portion of the first GaN layer, wherein the third GaN layer has a third conductivity type; removing a portion of the third GaN layer to expose a portion of the second GaN layer; forming a source structure coupled to the third GaN layer, wherein a first portion of the third GaN layer is disposed between the source structure and the second GaN layer; forming a drain structure coupled to the third GaN layer; and forming a gate structure coupled to the third GaN layer, wherein a second portion of the third GaN layer is disposed between the gate structure and the second GaN layer. |
地址 |
San Jose CA US |