发明名称 |
Semiconductor apparatus |
摘要 |
A semiconductor device may include first conductive patterns coupled to a common source and selection lines of a memory block formed at a substrate, second conductive patterns configured to form a bit line coupled to the memory block, and third conductive patterns configured to transmit a block selection signal to couple local lines of the memory block to global lines. The first to third conductive patterns are arranged in different layers over the memory block. |
申请公布号 |
US9123396(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201313960398 |
申请日期 |
2013.08.06 |
申请人 |
SK HYNIX INC. |
发明人 |
Son Chang Man;Lee Chang Hyuk;Lee Go Hyun;Baek Kwang Ho |
分类号 |
G11C5/06;G11C8/10 |
主分类号 |
G11C5/06 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device, comprising:
first conductive patterns comprising first common source wires and first selection line wires formed over a substrate, the first common source wires being coupled to a common source, and the first selection line wires being coupled to selection lines of a memory block; second conductive patterns comprising bit line wires coupled to the memory block; and third conductive patterns comprising first block selection signal wires configured to transmit a block selection signal to cause a switching circuit to couple local lines of the memory block to global lines, wherein the first to third conductive patterns are formed in different layers over the memory block. |
地址 |
Icheon KR |