Nonvolatile semiconductor memory device and method of manufacturing the same

摘要

According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, a first layer, a first conductive layer, a second conductive layer, an insulating layer, a block insulating layer formed on an inner surface of a pair of through holes formed in the insulating layer, the second conductive layer, and the first conductive layer, and on an inner surface of a connecting hole formed in the first layer and configured, a charge storage layer formed on the block insulating layer, a tunnel insulating layer formed on the charge storage layer, and a semiconductor pillar formed on the tunnel insulating layer. The semiconductor pillar includes a doped silicide layer which is formed in the insulating layer, a silicon layer formed in the second conductive layer and the first conductive layer, and a silicide layer formed in first layer.

主权项

1. A nonvolatile semiconductor memory device comprising:
a semiconductor substrate; a first layer formed above the semiconductor substrate; a first conductive layer formed above the first layer; a second conductive layer formed above the first conductive layer; an insulating layer formed on the second conductive layer; a block insulating layer formed on an inner surface of a pair of through holes formed in the insulating layer, the second conductive layer, and the first conductive layer, and extending in a stacking direction, and on an inner surface of a connecting hole formed in the first layer and configured to connect lower end portions of the pair of through holes; a charge storage layer formed on the block insulating layer; a tunnel insulating layer formed on the charge storage layer; and a semiconductor pillar formed on the tunnel insulating layer, wherein the semiconductor pillar includes a doped silicide layer which is formed in the pair of through holes formed in the insulating layer, and in which an impurity is doped, a silicon layer formed in the pair of through holes formed in the second conductive layer and the first conductive layer, and a silicide layer formed in the connecting hole formed in the first layer.