Dense oxide coated component of a plasma processing chamber and method of manufacture thereof

摘要

A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

主权项

1. An aluminum component of semiconductor processing equipment comprising:
a pure aluminum layer on a surface of the aluminum component of the semiconductor processing equipment; and a dense oxide coating on the pure aluminum layer wherein the dense oxide coating has been formed using plasma electrolytic oxidation, and wherein the plasma electrolytic oxidation causes the pure aluminum layer to undergo microplasmic discharge forming the dense oxide coating on the aluminum component; wherein the pure aluminum layer has a thickness of about 0.05 to 3 mm and the dense oxide coating has a thickness between about 0.02 to 0.2 mm.