Stress migration mitigation

摘要

A computer-implemented method of configuring a semiconductor device includes identifying an interconnect having an interconnect path length greater than a stress-induced void formation characteristic length of the semiconductor device, and placing, with a processor, a conductive structure adjacent the interconnect to define a pair of segments of the interconnect. Each segment has a length no greater than the stress-induced void formation characteristic length of the interconnect, and the conductive structure is selected from the group consisting of a decoy via connected to the interconnect, a floating tile disposed along the interconnect, a tab that laterally extends outward from the interconnect, and a jumper from a first metal layer in which the interconnect is disposed to a second metal layer.

主权项

1. A computer-implemented method of configuring a semiconductor device, the method comprising:
identifying an interconnect having an interconnect path length greater than a stress-induced void formation characteristic length of the semiconductor device; and placing, with a processor, a conductive structure adjacent the interconnect to define a pair of segments of the interconnect; wherein each segment has a length no greater than the stress-induced void formation characteristic length of the interconnect; and wherein the conductive structure is selected from the group consisting of a decoy via connected to the interconnect, a floating tile disposed along the interconnect, a tab that laterally extends outward from the interconnect, and a jumper from a first metal layer in which the interconnect is disposed to a second metal layer.