发明名称 Input impedance of low noise preamplifiers used for MRI with dual source FET, floating ground and permanent ground
摘要 A preamplifier (46) comprises a field effect transistor (64) in common source configuration. While the gate of the field effect transistor is coupled to an amplifier input circuit (e.g. MRI coil), the drain of the field effect transistor (64) is coupled to an amplifier output. The preamplifier comprises furthermore a first (66) and a second (68) source-ground connection. The first source-ground lead (66) couples the source of the field effect transistor to the ground node of the amplifier input circuit, while the second source-ground lead (68) couples the source of the field effect transistor to the ground node of the amplifier output circuit. As a result, amplifier output currents generate basically a voltage drop across the second source-ground lead (68). Thus, the amplifier input circuit is less influenced by any common voltage drop across any common source-ground connection.
申请公布号 US9124218(B2) 申请公布日期 2015.09.01
申请号 US201013375490 申请日期 2010.05.17
申请人 Koninklijke Philips N.V. 发明人 Reykowski Arne
分类号 H03F1/10;H03F3/193;H03F1/08 主分类号 H03F1/10
代理机构 代理人
主权项 1. A preamplifier device, comprising: a field effect transistor (FET) device configured to receive a signal input to the preamplifier device, the FET device itself comprising: a single gate; a single drain; a first source of the FET device coupled to a floating ground; and a second source of the FET device coupled to a second ground.
地址 Eindhoven NL