Semiconductor device and semiconductor package

摘要

A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area D formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area C formed on the semiconductor layer 22 and constituting the Schottky barrier diode 10. The semiconductor layer 22 in the diode area C is thinner than the semiconductor layer 22 in the transistor area D.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a semiconductor layer, comprising:
a first conductive type semiconductor area, formed on the semiconductor substrate,a second conductive type semiconductor area, formed on the first conductive type semiconductor area,a transistor area, comprising a transistor, anda diode area, comprising a Schottky barrier diode; and a metal film, electrically connected to the transistor and Schottky bonded with the semiconductor layer in the diode area, wherein a recessed portion is formed on the semiconductor layer in the diode area, which the recessed portion penetrates through the second conductive type semiconductor area to reach the first conductive type semiconductor area, and the Schottky barrier diode is formed in the first conductive type semiconductor area of the recessed portion.