| 摘要 |
The present invention relates to a vertical bipolar junction transistor structure. The present invention includes an emitter terminal and a collector terminal which are a high density doping region formed on a semiconductor substrate, a base terminal which is a high density doping region formed between the emitter terminal and the collector terminal, a drift region which surrounds the emitter terminal, is deeper than the base terminal and the collector terminal, and has a first doping density, a base layer which is formed under the drift region, and a collector layer which is in contact with the base layer and has a second doping density which is higher than the first doping density. According to the present invention, costs for manufacturing the vertical bipolar junction transistor are reduced by using a BCD process with low costs, and a current gain is increased. |
