Techniques for plasma processing a substrate

摘要

Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

主权项

1. A method of plasma processing a substrate, the method comprising:
introducing a feed gas to a plasma processing system comprising a plasma source, the feed gas comprising a first and second species, the first and second species having different ionization energies; providing a multi-level RF power waveform to the plasma source, the multi-level RF power waveform having at least a first power level during a first pulse duration and a second power level during a second pulse duration, the second power level being greater than the first power level, and the first power level is greater than a power level necessary to ionize the first species but less than another power level necessary to ionize the second species; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; providing a bias to the substrate during the first pulse duration; and not biasing the substrate during the second pulse duration.