Diode for variable-resistance material memories, processes of forming same, and methods of using same

摘要

A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.

主权项

1. A process comprising:
forming an island in a semiconductive film to include an island first height; reducing the island first height to an island second height, wherein the island second height is defined by a first wall and a second wall in the semiconductive film; wherein forming the first and the second wall includes: forming a patterned nitride film above the semiconductive film, wherein the semiconductive film is an n-doped semiconductive material above a p-doped semiconductor material; etching the semiconductive film to expose the p-doped semiconductive material; wherein the etching exposes the first wall and second walls of the island second height to form a recess; filling adjacent the island with a shallow-trench isolation (STI); forming a metal diode plug above and within the island second height, wherein the metal diode plug also contacts the first wall and the second wall; forming an electrode above and on the metal diode plug; and coupling the electrode to a variable-resistance material memory (VRMM) cell.