发明名称 PHOTODETECTOR AND MANUFACTURING METHOD THEREOF
摘要 <p>The present invention relates to a photodetector and a manufacturing method thereof. The photodetector includes a gate electrode, a substrate on which a dielectric layer is formed, a source electrode and a drain electrode which are separately formed on the upper side of the dielectric layer, a channel layer which connects the source electrode and the drain electrode, and a dye molecule coating the channel layer. At this time, the channel layer is made of hexagonal atom materials.</p>
申请公布号 KR101548681(B1) 申请公布日期 2015.09.01
申请号 KR20140073226 申请日期 2014.06.17
申请人 RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY 发明人 CHO, JEONG HO;LEE, YOUNG BIN;YU, SEONG HUN;HWANG, EUY HEON;LEE, JUN YOUNG;AHN, JONG HYUN
分类号 H01L31/101 主分类号 H01L31/101
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