发明名称 |
PHOTODETECTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>The present invention relates to a photodetector and a manufacturing method thereof. The photodetector includes a gate electrode, a substrate on which a dielectric layer is formed, a source electrode and a drain electrode which are separately formed on the upper side of the dielectric layer, a channel layer which connects the source electrode and the drain electrode, and a dye molecule coating the channel layer. At this time, the channel layer is made of hexagonal atom materials.</p> |
申请公布号 |
KR101548681(B1) |
申请公布日期 |
2015.09.01 |
申请号 |
KR20140073226 |
申请日期 |
2014.06.17 |
申请人 |
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
CHO, JEONG HO;LEE, YOUNG BIN;YU, SEONG HUN;HWANG, EUY HEON;LEE, JUN YOUNG;AHN, JONG HYUN |
分类号 |
H01L31/101 |
主分类号 |
H01L31/101 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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