| 摘要 |
本发明是形成半导体装置用的凸块的方法，包括：接合步骤，将自接合工具的前端伸出的金属线的前端接合于第1地点X1；金属线抽出步骤，使接合工具向远离第1地点X1的方向移动；薄壁部形成步骤，于基准面的第2地点X2利用接合工具按压金属线的一部分，而于金属线形成薄壁部(64)；金属线整形步骤，将接合于第1地点X1的金属线以自基准面竖立的方式进行整形；及凸块形成步骤，将金属线自薄壁部切断，而在第1地点X1形成具有自基准面竖立的形状的凸块(60)。藉此，可更简便且有效率地形成具有所需高度的凸块。; a wire reeling process, in which the bonding tool is moved in the direction away from the first point X1; a thin part forming process, in which a part of wire is pressed by the bonding tool in a second point X2 of a reference surface to form the thin part (64) on the wire; a wire shaping process, in which the wire bonded to the first point X1 is shaped to erect from the reference surface; and a bump forming process, in which the wire is cut from the thin part and a bump (60) having a shape of erected from the reference surface in the first point X1 is formed. Thereby, the bump having desired height may be formed more easily and efficiently. |
