Semiconductor device

摘要

According to one embodiment, a semiconductor device includes a circuit substrate, a semiconductor element, a sealing resin layer, and a conductive shielding layer. The circuit substrate includes an insulating layer, a plurality of interconnections forming first interconnection layers provided on an upper surface side of the insulating layer, a plurality of interconnections forming second interconnection layers provided on a lower surface side of the insulating layer, and a plurality of vias penetrating from the upper surface to the lower surface of the insulating layer. The semiconductor element is mounted on the upper surface side of the circuit substrate. The conductive shielding layer covers the sealing resin layer and part of an end portion of the circuit substrate. Any of the plurality of vias and the conductive shielding layer are electrically connected.

主权项

1. A semiconductor memory device comprising:
a circuit substrate including an insulating layer, a plurality of interconnections provided on the insulating layer, and a copper layer or a tungsten layer, and sections of one of the copper layer and the tungsten layer being exposed at the side surface of the circuit substrate; a flash memory element mounted on the circuit substrate; a sealing resin layer sealing the flash memory element; a conductive shielding layer covering the sealing resin layer; and an external connection terminal connected to the interconnections; the sections and the conductive shielding layer being electrically connected, one of the interconnections and the external connection terminal connected to one of the interconnections being capable of becoming a ground potential, the interconnection capable of becoming the ground potential being electrically connected to the sections, a distance between the adjacent sections capable of becoming the ground potential being not more than a half of a wavelength of an electromagnetic wave to be shielded.