发明名称 |
TRANSIENT VOLTAGE SUPPRESSOR HAVING AN EPITAXIAL LAYER FOR HIGHER AVALANCHE VOLTAGE OPERATION |
摘要 |
A semiconductor device includes a heavily doped first layer of a first conductivity type having a bulk portion and a mesa portion disposed above the bulk portion. A second layer of a second conductivity type is deposited on the mesa portion of the first layer to form a p-n junction therewith. The second layer is more lightly doped than the first layer. A contact layer of the second conductivity type is formed on the second layer. First and second electrodes electrically contact the bulk portion of the first layer and the contact layer, respectively.
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申请公布号 |
KR20050070067(A) |
申请公布日期 |
2005.07.05 |
申请号 |
KR20057006679 |
申请日期 |
2005.04.18 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
ENG JACK;NAUGHTON JOHN;LATERZA LAWRENCE;HAYES JAMES;GUILLOT JEAN MICHEL |
分类号 |
H01L29/06;H01L29/861;(IPC1-7):H01L27/04 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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