Method to form group III-V and Si/Ge FINFET on insulator

摘要

A method includes providing a structure having a substrate, a first electrically insulating layer overlying the substrate, a first semiconductor layer comprised of a first semiconductor material overlying the first electrically insulating layer, a second electrically insulating layer overlying the first semiconductor layer in a first portion of the structure and a second semiconductor layer comprised of a second, different semiconductor material overlying the second electrically insulating layer in the first portion. The method further includes growing additional first semiconductor material on the first semiconductor layer in a second portion of the structure to form a regrown semiconductor layer; forming fins; forming gate structures orthogonal to the fins and removing at least a portion of the first semiconductor layer in the first portion of the structure to form a void and filling the void with insulating material. Structures formed by the method are also disclosed.

主权项

1. A method, comprising:
providing a structure comprised of a substrate, a first electrically insulating layer overlying a surface of the substrate, a first semiconductor layer comprised of a first semiconductor material overlying the first electrically insulating layer, a second electrically insulating layer overlying the first semiconductor layer in a first portion of the structure, and a second semiconductor layer comprised of a second semiconductor material different from the first semiconductor material overlying the second electrically insulating layer in the first portion; growing additional first semiconductor material on the first semiconductor layer in a second portion of the structure to form a regrown semiconductor layer; forming fins in the regrown semiconductor layer and in the second semiconductor layer; forming gate structures orthogonal to the fins; removing at least a portion of the first semiconductor layer in the first portion of the structure between the first electrically insulating layer and the second electrically insulating layer to form a void, where the step of removing is performed subsequent to the step of forming the gate structures; and filling the void with an electrically insulating material.