Methods of producing optoelectronic semiconductor components, and optoelectronic semiconductor lasers

摘要

An optoelectronic semiconductor laser includes a growth substrate; a semiconductor layer sequence that generates laser radiation; a front facet at the growth substrate and at the semiconductor layer sequence, wherein the front facet constitutes a main light exit side for the laser radiation generated in the semiconductor laser and has a light exit region at the semiconductor layer sequence; a light blocking layer for the laser radiation, which partly covers at least the growth substrate at the front facet such that the light exit region is not covered by the light blocking layer; and a bonding pad at a side of the semiconductor layer sequence facing away from the growth substrate, wherein a distance between the bonding pad and the light blocking layer at least at the light exit region is 0.1 μm to 100 μm.

主权项

1. An optoelectronic semiconductor laser comprising: a growth substrate, a semiconductor layer sequence that generates laser radiation, a front facet at the growth substrate and at the semiconductor layer sequence, wherein the front facet constitutes a main light exit side for the laser radiation generated in the semiconductor laser and has a light exit region at the semiconductor layer sequence, a light blocking layer for the laser radiation, which partly covers at least the growth substrate at the front facet such that the light exit region is not covered by the light blocking layer, and a bonding pad at a side of the semiconductor layer sequence facing away from the growth substrate, wherein a distance between the bonding pad and the light blocking layer at least at the light exit region is 0.1 um to 100 um; wherein the light blocking layer is a metallic layer or a metallic layer stack; wherein the growth substrate is transparent for the laser radiation, the laser radiation has a wavelength in the spectral range of 380 nm to 550 nm, and the semiconductor layer sequence is based on AlInGaN.