| 摘要 |
A sheet resistance of a field-effect transistor is reduced. A channel layer, first spacer layer, second spacer layer, first electronic barrier layer, and second electronic barrier layer are sequentially grown on a main surface of a substrate. Then, a gate recess section is formed, and an ion-implanted section is formed. Then, a third electronic barrier layer and a p-type layer are formed using an MOCVD method again. Then, a p-type layer portion excluding a portion on the gate recess section is removed. Then, ions are implanted to the regrown third electronic barrier layer, and an ion-implanted section is formed again by implanting B ions. Then, a source electrode and a drain electrode are sequentially formed on the third electronic barrier layer. Then, a gate electrode is formed on the p-type layer. |
