发明名称 |
SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE |
摘要 |
A semiconductor device with a small cell area and excellent data read/write capability is achieved. In the semiconductor device, a wiring for writing data is provided, and a first transistor with a low off-state current is turned on to supply data to a gate of a second transistor and is turned off so that electric charge corresponding to data is retained. Moreover, a wiring for reading data is provided, and a third transistor is turned on so that data is read out in accordance with the on/off state of the second transistor retaining the electric charge. With this configuration, data write and data read are achieved in the same cycle. |
申请公布号 |
US2015243332(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201514625786 |
申请日期 |
2015.02.19 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
KOYAMA Jun |
分类号 |
G11C5/06;G11C11/418;G11C5/10 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a first transistor; a second transistor; a third transistor; and a capacitor, wherein a gate of the first transistor is electrically connected to a first wiring, wherein one of a source and a drain of the first transistor is electrically connected to a second wiring, wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, wherein one of a source and a drain of the second transistor is electrically connected to a third wiring, wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor, wherein a gate of the third transistor is electrically connected to a fourth wiring, wherein the other of the source and the drain of the third transistor is electrically connected to a fifth wiring, and wherein one electrode of the capacitor is electrically connected to the gate of the second transistor. |
地址 |
Atsugi-shi JP |