发明名称 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
摘要 A semiconductor device with a small cell area and excellent data read/write capability is achieved. In the semiconductor device, a wiring for writing data is provided, and a first transistor with a low off-state current is turned on to supply data to a gate of a second transistor and is turned off so that electric charge corresponding to data is retained. Moreover, a wiring for reading data is provided, and a third transistor is turned on so that data is read out in accordance with the on/off state of the second transistor retaining the electric charge. With this configuration, data write and data read are achieved in the same cycle.
申请公布号 US2015243332(A1) 申请公布日期 2015.08.27
申请号 US201514625786 申请日期 2015.02.19
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 KOYAMA Jun
分类号 G11C5/06;G11C11/418;G11C5/10 主分类号 G11C5/06
代理机构 代理人
主权项 1. A semiconductor device comprising: a first transistor; a second transistor; a third transistor; and a capacitor, wherein a gate of the first transistor is electrically connected to a first wiring, wherein one of a source and a drain of the first transistor is electrically connected to a second wiring, wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, wherein one of a source and a drain of the second transistor is electrically connected to a third wiring, wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor, wherein a gate of the third transistor is electrically connected to a fourth wiring, wherein the other of the source and the drain of the third transistor is electrically connected to a fifth wiring, and wherein one electrode of the capacitor is electrically connected to the gate of the second transistor.
地址 Atsugi-shi JP