发明名称 |
VERTICAL BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
The present disclosure relates to a vertical bipolar junction transistor. A vertical bipolar junction transistor includes a high concentration doping region emitter terminal disposed on a semiconductor substrate; a high concentration doping region collector terminal disposed on a semiconductor substrate; a high concentration doping region base terminal disposed between the emitter terminal and the collector terminal; a drift region having a first doping concentration surrounding the emitter terminal and being deeper than either the base terminal or the collector terminal; a base layer disposed below the drift region; a collector layer in contact with the base layer, the collector layer having a second doping concentration higher than the first doping concentration. The manufacturing cost of the vertical bipolar junction transistor can be lowered and a current gain can be elevated using a low-cost BCD process. |
申请公布号 |
US2015243770(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414525545 |
申请日期 |
2014.10.28 |
申请人 |
MagnaChip Semiconductor, Ltd. |
发明人 |
HEBERT Francois;PANG Yon Sup;CHO Seong Min;KIM Ju Ho |
分类号 |
H01L29/732;H01L29/66;H01L29/73 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
1. A vertical bipolar junction transistor comprising:
a high concentration doping region emitter terminal disposed on a semiconductor substrate; a high concentration doping region collector terminal disposed on a semiconductor substrate; a high concentration doping region base terminal disposed between the emitter terminal and the collector terminal; a drift region having a first doping concentration surrounding the emitter terminal and being deeper than either the base terminal or the collector terminal; a base layer disposed below the drift region; and a collector layer in contact with the base layer, the collector layer having a second doping concentration higher than the first doping concentration. |
地址 |
Cheongju-si KR |