| 发明名称 |
RE-CRYSTALLIZATION FOR BOOSTING STRESS IN MOS DEVICE |
| 摘要 |
A method includes forming a dummy gate stack over a semiconductor substrate, removing the dummy gate stack to form a recess, and implanting a portion of the semiconductor substrate through the recess. During the implantation, an amorphous region is formed from the portion of the semiconductor substrate. The method further includes forming a strained capping layer, wherein the strained capping layer extends into the recess. An annealing is performed on the amorphous region to re-crystallize the amorphous region. The strained capping layer is then removed. |
| 申请公布号 |
US2015243526(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414186384 |
申请日期 |
2014.02.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Hsiao Ru-Shang;Chan Cing-Yao;Wang Chun-Ying;Wang Jen-Pan |
| 分类号 |
H01L21/324;H01L21/265;H01L29/78;H01L29/66 |
主分类号 |
H01L21/324 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a dummy gate stack over a semiconductor substrate; removing the dummy gate stack to form a recess; implanting a portion of the semiconductor substrate through the recess, wherein an amorphous region is formed from the portion of the semiconductor substrate; forming a strained capping layer, wherein the strained capping layer extends into the recess; performing an annealing on the amorphous region to re-crystallize the amorphous region; and removing the strained capping layer. |
| 地址 |
Hsin-Chu TW |
