METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

主权项

1. A method of manufacturing a semiconductor device, comprising forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes non-simultaneously performing:
forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate in a process chamber and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon included in the precursor gas is maintained without being broken; exhausting the precursor gas in the process chamber through an exhaust system; forming a second solid layer by supplying a first reaction gas containing the second element to the substrate in the process chamber to modify the first solid layer; and exhausting the first reaction gas in the process chamber through the exhaust system.