| 发明名称 |
Methods for Forming Semiconductor Device Structures |
| 摘要 |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. |
| 申请公布号 |
US2015243788(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201514707785 |
申请日期 |
2015.05.08 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lochtefeld Anthony J.;Langdo Thomas A.;Hammond Richard;Currie Matthew T.;Fitzgerald Eugene A. |
| 分类号 |
H01L29/78;H01L29/10;H01L29/165;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A structure comprising:
a substrate; a dielectric layer over the substrate; and a first strained layer over the dielectric layer, wherein a portion of the first strained layer is relaxed. |
| 地址 |
Hsin-Chu TW |
