SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.

主权项

1. A method comprising:
depositing a first layer on a first semiconductor epi layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer, wherein the first layer comprises a first metal and a second metal; depositing a second layer comprising a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing; subjecting the first semiconductor epi layer to at least a first annealing act to provide a first structure; and stripping at least a portion of the first structure to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.