| 发明名称 |
LOW-K SPACER FOR RMG FINFET FORMATION |
| 摘要 |
A method for semiconductor fabrication includes providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels. Dummy spacers are formed along a periphery of the mask layers. A dummy gate structure is formed between the dummy spacers. The dummy spacers are removed to provide a recess. Low-k spacers are formed in the recess. |
| 申请公布号 |
US2015243760(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414191751 |
申请日期 |
2014.02.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
He Hong;Tseng Chiahsun;Yamashita Tenko;Yeh Chun-Chen;Yin Yunpeng |
| 分类号 |
H01L29/66;H01L29/78;H01L29/08 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for semiconductor fabrication, comprising:
providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels; forming dummy spacers along a periphery of the mask layers; forming a dummy gate structure between the dummy spacers; removing the dummy spacers to provide a recess; and forming low-k spacers in the recess. |
| 地址 |
Armonk NY US |
