LIGHT EMITTING DIODE INCLUDING WINDOW LAYER AND THE FABRICATION METHOD THEREOF

摘要

A light emitting diode including window layer is provided to improve the mobility of atoms caused by introduction of indium by reducing mismatch of lattices generated in an epitaxial growth process. A light emitting diode is included in a light emitting diode wherein at least one kind of material selected from a group of GaInP and AlGaInP is formed on a light generating part. The light generating part can include semiconductor layers(103,105) of different regions and an active layer(104) formed between the semiconductor layers. The composition ratio of the GaInP can be GayIn1-yP(0<y<1). The composition ratio of the AlGaLnP can be AlxGayInzP(x+y+z=1).