TUNNELING TRANSISTOR HAVING A VERTICAL CHANNEL, VARIABLE RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

摘要

A tunneling transistor including a semiconductor substrate on which a source is formed in an upper region and having a first semiconductor material layer, a pillar formed on the semiconductor substrate and having a structure in which a channel layer and a drain are sequentially stacked, a gate formed to surround a circumference of the pillar, and a second semiconductor material layer constituting a portion of the source, formed between the source and the channel layer, having the same conductivity type as the source, and having a band gap smaller than the first semiconductor material layer. Wherein, the source and the drain have opposite conductivity types.

主权项

1. A tunneling transistor comprising:
a semiconductor substrate having a source formed in an upper region and including a first semiconductor material layer; a pillar formed on the semiconductor substrate and having a channel layer and a drain sequentially stacked; a gate formed to surround the pillar; and a second semiconductor material layer formed between the in source and the channel layer, the second semiconductor material layer having the same conductivity type as the source and having a band gap lower than the first semiconductor material layer, wherein the source and the drain have opposite conductivity types from each other.