| 发明名称 |
Pulsed Plasma Monitoring Using Optical Sensor |
| 摘要 |
Monitoring of a pulsed plasma is described using an optical sensor. In one example, the invention includes receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber, sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform, accumulating multiple sampled waveforms to form a mean waveform, and transmitting characteristics of the mean waveform to a chamber control tool. |
| 申请公布号 |
US2015241272(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414189536 |
申请日期 |
2014.02.25 |
| 申请人 |
Lian Lei;Walker Quentin;Cantwell Dermot |
发明人 |
Lian Lei;Walker Quentin;Cantwell Dermot |
| 分类号 |
G01J1/42 |
主分类号 |
G01J1/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber; sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform; accumulating multiple sampled waveforms to form a mean waveform; and transmitting characteristics of the mean waveform to a chamber control tool. |
| 地址 |
Freemont CA US |
