发明名称 |
SELECTIVELY RECESSED REFERENCE PLANE STRUCTURE IN MODULE TAB AREA OF MEMORY MODULE AND METHOD FOR FORMING SELECTIVELY RECESSED REFERENCE PLANE |
摘要 |
A memory module includes a signal tab and a power tab spaced apart from each other on a surface layer of a substrate, the signal tab and the power tab defining a module tab area, a reference plane layer below the surface layer, the reference plane layer being recessed below the signal tab and being non-recessed below the power tab, and an insulating layer between the surface layer and the reference plane layer. |
申请公布号 |
US2015241930(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201514625837 |
申请日期 |
2015.02.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Dongyeop;LEE Jaejun |
分类号 |
G06F1/18 |
主分类号 |
G06F1/18 |
代理机构 |
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代理人 |
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主权项 |
1. A memory module, comprising:
a signal tab and a power tab spaced apart from each other on a surface layer of a substrate, the signal tab and the power tab defining a module tab area; a reference plane layer below the surface layer, the reference plane layer being recessed below the signal tab and being non-recessed below the power tab; and an insulating layer between the surface layer and the reference plane layer. |
地址 |
Suwon-si KR |