发明名称 SELECTIVELY RECESSED REFERENCE PLANE STRUCTURE IN MODULE TAB AREA OF MEMORY MODULE AND METHOD FOR FORMING SELECTIVELY RECESSED REFERENCE PLANE
摘要 A memory module includes a signal tab and a power tab spaced apart from each other on a surface layer of a substrate, the signal tab and the power tab defining a module tab area, a reference plane layer below the surface layer, the reference plane layer being recessed below the signal tab and being non-recessed below the power tab, and an insulating layer between the surface layer and the reference plane layer.
申请公布号 US2015241930(A1) 申请公布日期 2015.08.27
申请号 US201514625837 申请日期 2015.02.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM Dongyeop;LEE Jaejun
分类号 G06F1/18 主分类号 G06F1/18
代理机构 代理人
主权项 1. A memory module, comprising: a signal tab and a power tab spaced apart from each other on a surface layer of a substrate, the signal tab and the power tab defining a module tab area; a reference plane layer below the surface layer, the reference plane layer being recessed below the signal tab and being non-recessed below the power tab; and an insulating layer between the surface layer and the reference plane layer.
地址 Suwon-si KR