| 发明名称 |
HIGH VOLTAGE GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
A high voltage gallium nitride based semiconductor device includes an n-type gallium nitride freestanding substrate, and an n-type gallium nitride based semiconductor layer including a drift layer formed on the surface of the n-type gallium nitride freestanding substrate so as to have a reverse breakdown voltage of not less than 3000 V. The drift layer is configured such that a carbon concentration is not less than 3.0×1016/cm3 in a region which has an electric field intensity of not more than 1.5 MV/cm when a maximum allowable voltage where there occurs no breakdown phenomenon is applied as a reverse bias voltage. |
| 申请公布号 |
US2015243736(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414481123 |
申请日期 |
2014.09.09 |
| 申请人 |
Hitachi Metals, Ltd. |
发明人 |
KANEDA Naoki |
| 分类号 |
H01L29/20;H01L21/02;H01L29/10 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high voltage gallium nitride based semiconductor device, comprising:
an n-type gallium nitride freestanding substrate, and an n-type gallium nitride based semiconductor layer including a drift layer formed on the surface of the n-type gallium nitride freestanding substrate so as to have a reverse breakdown voltage of not less than 3000 V, wherein the drift layer is configured such that a carbon concentration is not less than 3.0×1016/cm3 in a region which has an electric field intensity of not more than 1.5 MV/cm when a maximum allowable voltage where there occurs no breakdown phenomenon is applied as a reverse bias voltage. |
| 地址 |
Tokyo JP |
