MEMORY DEVICE

摘要

Provided is a memory device including a control gate, floating gates, an inter-gate insulating layer and a select gate. The control gate is disposed on a substrate. The floating gates are disposed between the control gate and the substrate, wherein a width of each floating gate is greater than a width of the control gate. The inter-gate insulating layer is disposed between the control gate and each of the floating gates. The select gate is disposed on the substrate adjacent to the control gate.

主权项

1. A memory device, comprising:
a control gate, disposed on a substrate; a plurality of floating gates, disposed between the control gate and the substrate, wherein a width of each floating gate is greater than a width of the control gate; an inter-gate insulating layer, disposed between the control gate and each of the floating gates; and a select gate, disposed on the substrate adjacent to the control gate.