| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to improve the reliability and property of the semiconductor device by improving a deposition process of a TiN layer and preventing the crack. CONSTITUTION: A first insulating layer(310) equipped with a first hole(H1) is formed on a semiconductor substrate(300). A first TiN layer(320) is formed in order to fill in the first hole. A second insulating layer(330), equipped with a second hole(H2) exposing the first TiN layer, is formed on the first insulating layer. A second TiN layer(340) is formed in order to fill in the second hole. A pillar type storage node(350) including the first and the second TiN layer is formed.
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