| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an interlayer filling material composition satisfying the adaptability to a production process of a three-dimensional multi-layer semiconductor device, and having a high thermal conductivity. <P>SOLUTION: The interlayer filling material composition for three-dimensional multi-layer semiconductor device contains at least an epoxy resin (A) having an epoxy equivalent of≥2,500 g/eq. and an epoxy resin (B) having an epoxy equivalent of≤400 g/eq. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
