发明名称 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
摘要 |
A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage. |
申请公布号 |
GB2523501(A) |
申请公布日期 |
2015.08.26 |
申请号 |
GB20150009995 |
申请日期 |
2013.06.24 |
申请人 |
INTEL CORPORATION |
发明人 |
HAN WUI THEN;SANSAPTAK DASGUPTA;MARKO RADOSAVLJEVIC;BENJAMIN CHU-KUNG;SEUNG HOON SUNG;SANAZ K GARDNER;ROBERT S CHAU |
分类号 |
H01L29/423;H01L29/20;H01L29/78;H01L29/786 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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