发明名称 Gate drive circuit with a voltage stabilizer and a method
摘要 The present invention concerns The gate drive circuit comprising means (V2, V3) for creating bipolar voltage to a gate (X4) of a IGB transistor and means (V1, C3) for compensating for Miller currents of the IGB transistor. In accordance with the invention the means (V1, C3) for compensating are formed by a switching element (V1) connected in series with a capacitor (C3) between the gate (X4) and supply voltage (10).
申请公布号 EP2911298(A1) 申请公布日期 2015.08.26
申请号 EP20140156570 申请日期 2014.02.25
申请人 ABB OY 发明人 KITTILÄ, JUHA-PEKKA;NIEMI, MIKA ILKKA OLAVI;SAARINEN, MIKKO
分类号 H03K17/0812;H03K17/14;H03K17/16 主分类号 H03K17/0812
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