ESD protection device and method for producing the same

摘要

An ESD protection device includes a first discharge electrode and a second discharge electrode arranged to oppose each other, a discharge supporting electrode formed so as to span between the first and second discharge electrodes, and an insulator substrate that retains the first and second discharge electrodes and the discharge supporting electrode. The discharge supporting electrode is constituted by a group of a plurality of metal particles each coated with a semiconductor film containing silicon carbide. This discharge supporting electrode is obtained by firing a semiconductor-metal complex powder in which a semiconductor powder composed of silicon carbide is fixed to surfaces of metal particles. Selection is made so that the relationship between a coating amount Q [wt %] of the semiconductor powder in the semiconductor-metal complex powder and a specific surface area S [m2/g] of the metal powder satisfies Q/S≧8.

主权项

1. An ESD protection device comprising:
a first discharge electrode and a second discharge electrode arranged to oppose each other; a discharge supporting electrode formed so as to span between the first and second discharge electrodes; and an insulator substrate that retains the first and second discharge electrodes and the discharge supporting electrode, wherein the discharge supporting electrode is constituted by a group of a plurality of metal particles each coated with a semiconductor film containing silicon carbide, wherein the semiconductor film containing silicon carbide is directly fixed to surfaces of metal particles.