Variable resistance memory devices and method of forming the same

摘要

A variable resistance memory device includes a lower electrode on a substrate, a variable resistance pattern on the lower electrode, and an upper electrode on the variable resistance pattern. The upper electrode is in contact with at least a sidewall of the variable resistance pattern.

主权项

1. A variable resistance memory device, comprising:
a lower electrode on a substrate; a variable resistance pattern on the lower electrode; a mold layer in contact with a portion of a sidewall of the variable resistance pattern; and an upper electrode on the variable resistance pattern, the upper electrode being in contact with at least another portion of the sidewall of the variable resistance pattern.