发明名称 Conductive film and semiconductor device
摘要 A conductive film of an embodiment includes: a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction.
申请公布号 US9117823(B2) 申请公布日期 2015.08.25
申请号 US201514663523 申请日期 2015.03.20
申请人 Kabushiki Kaisha Toshiba 发明人 Yamazaki Yuichi;Wada Makoto;Saito Tatsuro;Sakai Tadashi
分类号 H01L23/532;H01L23/522;H01L23/528 主分类号 H01L23/532
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A semiconductor device comprising: a substrate; an insulation film disposed on the substrate; and a conductive film disposed on the insulation film, wherein the conductive film contains a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction, and the graphene in the conductive film is separated from the insulation film by a gap.
地址 Minato-ku JP