发明名称 |
Conductive film and semiconductor device |
摘要 |
A conductive film of an embodiment includes: a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction. |
申请公布号 |
US9117823(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201514663523 |
申请日期 |
2015.03.20 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Yamazaki Yuichi;Wada Makoto;Saito Tatsuro;Sakai Tadashi |
分类号 |
H01L23/532;H01L23/522;H01L23/528 |
主分类号 |
H01L23/532 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A semiconductor device comprising:
a substrate; an insulation film disposed on the substrate; and a conductive film disposed on the insulation film, wherein the conductive film contains a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction, and the graphene in the conductive film is separated from the insulation film by a gap. |
地址 |
Minato-ku JP |