| 主权项 |
1. A method of manufacturing a thin film transistor substrate comprising a gate electrode, a semiconductor pattern, a source electrode and a drain electrode, the method comprising:
coating a composition comprising a metal oxalate and a solvent on a substrate to form a thin film on the substrate; annealing the thin film; and patterning the thin film to form a semiconductor pattern, wherein the metal oxalate is represented by following Chemical Formula 1, wherein M represents at least one of zinc, tin, indium and gallium; X represents at least one of hydroxyl group, alkoxy group, halogen, nitrate, acetate ion, sulfate ion, phosphate ion, oxalate ion, perchlorate ion, chlorate ion, chlorine dioxide and tetrafluoroborate; HX is a molecule formed by hydrogen combined with at least one of hydroxyl group, alkoxy group, halogen, nitrate, acetate ion, sulfate ion, phosphate ion, oxalate ion, perchlorate ion, chlorate ion, chlorine dioxide and tetrafluoroborate; “a” represents a value obtained from subtracting 2 from M's atomic value of M; and “b” is an integral number from 1 to 4. |
