| 发明名称 | Carbon-chalcogenide variable resistance memory device | ||
| 摘要 | A variable resistance memory device that includes a first electrode, a second electrode, and a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer including carbon incorporated into germanium selenide chalcogenide glass. The variable resistance memory device may include a second chalcogenide material layer between the first chalcogenide material layer and the second electrode. The variable resistance memory device may include a first metallic layer between the second chalcogenide material layer and the second electrode. The variable resistance memory device may include a third chalcogenide material layer between the first metallic layer and the second electrode. The variable resistance memory device may include a fourth chalcogenide material layer between the first chalcogenide material layer and the first electrode. The first chalcogenide layer may be formed by co-sputtering carbon with Ge40Se60. | ||
| 申请公布号 | US9118006(B1) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201414457400 | 申请日期 | 2014.08.12 |
| 申请人 | Boise State University | 发明人 | Campbell Kristy A. |
| 分类号 | H01L45/00 | 主分类号 | H01L45/00 |
| 代理机构 | Parsons Behle & Latimer | 代理人 | Parsons Behle & Latimer |
| 主权项 | 1. A variable resistance memory device comprising: a first electrode; a second electrode; a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer comprising carbon incorporated into germanium selenide chalcogenide glass; a second chalcogenide material layer between the first chalcogenide material layer and the second electrode; a first metallic layer between the second chalcogenide material layer and the second electrode; and a third chalcogenide material layer between the first metallic layer and the second electrode. | ||
| 地址 | Boise ID US | ||