主权项 |
1. A semiconductor device, comprising:
a dielectric layer disposed on a substrate; and a randomly patterned interconnect structure for implementing a physical unclonable function (PUF), the randomly patterned interconnect structure being disposed in the dielectric layer, and the randomly patterned interconnect structure comprising:
an array of conductive elements organized in a uniform grid pattern,wherein each of the conductive elements have a first rectangular shape in a top view, the first rectangular shape defined by a long side aligned longitudinally with a first direction and a short side aligned longitudinally with a second direction perpendicular to the first direction, andwherein the short side is only in direct physical contact with the dielectric layer,an array of connection regions randomly located, respectively, in the uniform grid pattern between first pairs of adjacent ones of the conductive elements,wherein each of the connection regions have a second rectangular shape in the to view, the second rectangular shape defined by a first side and a second side,wherein the first side is only in direct physical contact with the long side of a respective one of the first pairs of the adjacent ones of the conductive elements,wherein each of the connection regions electrically connects, along the second direction, the respective one of the first pairs of the adjacent ones of the conductive elements, andwherein the second side is aligned longitudinally with the second direction and only in direct physical contact with the dielectric layer, andan array of insulation regions randomly located, respectively, in the uniform grid pattern and between second pairs of the adjacent ones of the conductive elements,wherein each of the insulation regions comprise a respective portion of the dielectric layer and insulate a respective one of the second pairs of the adjacent ones of the conductive elements. |