CVD precursors

摘要

A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.

主权项

1. A method for producing silicon containing films on a substrate wherein the method comprises the thermal or plasma polymerization of a reactive gas mixture comprising bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof, wherein the film deposited is a silicon carbonitride film, and wherein the bisaminosilacyclobutane is represented by: where each R1, R2, R3, and R4 is selected from hydrogen and a monovalent hydrocarbon group having 1 to 6 carbons, where R1 and R2 together may optionally form a cyclic group including N and/or R3 and R4 together may optionally form a cyclic group including N; and where the thermal or plasma polymerization is carried out at a temperature of from 25 to 500° C.