| 发明名称 | Resistive RAM, method for fabricating the same, and method for driving the same | ||
| 摘要 | A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide. | ||
| 申请公布号 | US9117513(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201213554635 | 申请日期 | 2012.07.20 |
| 申请人 | SK Hynix Inc.;Gwangju Institute Of Science And Technology | 发明人 | Hwang Hyun-Sang;Liu Xinjun;Son Myoung-Woo |
| 分类号 | G11C11/00;G11C13/00;H01L45/00 | 主分类号 | G11C11/00 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A resistive random access memory (ReRAM) comprising: a first electrode; a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage; a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation; and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide. | ||
| 地址 | Gyeonggi-do KR | ||