| 发明名称 | Method for fabricating semiconductor device | ||
| 摘要 | A method of fabricating a semiconductor device is disclosed. The method includes the steps of: sequentially forming agate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer. | ||
| 申请公布号 | US9117847(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201414516592 | 申请日期 | 2014.10.17 |
| 申请人 | UNITED MICROELECTRONICS CORP. | 发明人 | Hsu Cheng-Yuan;Ren Chi;Wen Tzeng-Fei |
| 分类号 | H01L21/06;H01L29/66;H01L29/423;H01L29/788;H01L21/28;H01L27/115;H01L21/266 | 主分类号 | H01L21/06 |
| 代理机构 | Winston Hsu | 代理人 | Winston Hsu ;Margo Scott |
| 主权项 | 1. A method of fabricating a semiconductor device, comprising: sequentially forming a gate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; forming a second gate layer filling the opening and overlapping the first gate layer; and removing a part of the second gate layer, a part of the first gate layer, and a part of the gate dielectric layer for forming a gate stack structure. | ||
| 地址 | Science-Based Industrial Park, Hsin-Chu TW | ||