Semiconductor device

摘要

Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.

主权项

1. A semiconductor device comprising:
a switching element and a transistor; a word line electrically connected to a gate of the switching element; a bit line electrically connected to one of a source and a drain of the switching element; a gate of the transistor electrically connected to the word line; and a source and a drain of the transistor electrically connected to a signal generation circuit, wherein the transistor serves as a capacitor when potentials of the source and the drain of the transistor are controlled by the signal generation circuit.