发明名称 Encapsulating layer-covered optical semiconductor element, producing method thereof, and optical semiconductor device
摘要 A method for producing an encapsulating layer-covered optical semiconductor element includes a disposing step of disposing an encapsulating layer at one side in a thickness direction of a support and a covering step of, after the disposing step, covering an optical semiconductor element with the encapsulating layer so as to expose one surface thereof to obtain an encapsulating layer-covered optical semiconductor element.
申请公布号 US9117984(B2) 申请公布日期 2015.08.25
申请号 US201314141607 申请日期 2013.12.27
申请人 NITTO DENKO CORPORATION 发明人 Katayama Hiroyuki;Noro Hiroshi;Ito Hisataka
分类号 H01L33/50;H01L33/52;H01L33/60 主分类号 H01L33/50
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A method for producing an encapsulating layer-covered optical semiconductor element comprising: a disposing step of disposing an encapsulating layer containing a curable resin at one side in a thickness direction of a support; a covering step of, after the disposing step, covering a plurality of optical semiconductor elements with the encapsulating layer that is in a B-stage state so as to expose one surface of each of the optical semiconductor elements to obtain an encapsulating layer-covered optical semiconductor element; after the covering step, an encapsulating step in which the encapsulating layer is cured to be brought into a C-stage state and the optical semiconductor elements are encapsulated by the encapsulating layer in a C-stage state; and after the covering step, a cutting step in which the encapsulating layer is cut corresponding to each of the optical semiconductor elements while visually confirming each of the optical semiconductor elements having the one surface exposed to obtain a plurality of encapsulating layer-covered optical semiconductor elements.
地址 Osaka JP