| 发明名称 | Light emitting element and method of making same | ||
| 摘要 | A light emitting element that includes a Ga2O3 substrate; an AlxGa1-xN buffer layer (0≦×≦1) formed on the Ga2O3 substrate; an n-GaN layer formed on the AlxGa1-xN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer. | ||
| 申请公布号 | US9117974(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201414317089 | 申请日期 | 2014.06.27 |
| 申请人 | KOHA CO., LTD. | 发明人 | Ichinose Noboru;Shimamura Kiyoshi;Kaneko Yukio;Garcia Villora Encarnacion Antonia;Aoki Kazuo |
| 分类号 | H01L33/42;C30B15/00;C30B15/34;C30B29/16;H01L21/02;H01L33/00;H01L33/32;H01L33/62 | 主分类号 | H01L33/42 |
| 代理机构 | Scully, Scott, Murphy & Presser, P.C. | 代理人 | Scully, Scott, Murphy & Presser, P.C. |
| 主权项 | 1. A flip-chip type light emitting element, comprising: a gallium oxide substrate; an AlxGa1-xN buffer layer (0≦x≦1) formed on the gallium oxide substrate; an n-GaN layer formed on the AlxGa1-xN buffer layer; an p-GaN layer formed on first a portion of the n-GaN layer; an n-electrode formed on a second portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer. | ||
| 地址 | Tokyo JP | ||