发明名称 RESIST ARRANGEMENT METHOD AND RESIST ARRANGEMENT PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a resist arrangement method of performing such a resist arrangement that a transfer pattern with high form precision can be formed by imprinting.SOLUTION: According to the resist arrangement method, first and second lattice vectors of a drop lattice to arrange a resist drop are set. At such a time, on the basis of information about a grid that is a minimum lattice unit in which the resist drop can be dripped, the first and second lattice vectors are set in such a manner that resist film thickness during imprinting is settled within a predetermined range. In such a case, the first and second lattice vectors are set to vectors in directions which are different from both first and second minimum lattice vectors of the grid. The resist drop is then arranged within the drop lattice.
申请公布号 JP2015153953(A) 申请公布日期 2015.08.24
申请号 JP20140027866 申请日期 2014.02.17
申请人 TOSHIBA CORP 发明人 TANAKA SATOSHI
分类号 H01L21/027;B29C59/02 主分类号 H01L21/027
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