| 摘要 |
The present invention relates to a partial page program method for a nonvolatile memory device. According to the present invention, random data, stored in the nonvolatile memory device, are loaded on a page buffer circuit included in the nonvolatile memory device; partial page data in the size corresponding to a portion of one page is received from a memory controller; the partial page data, received from the memory controller, are re-loaded on the page buffer circuit on which the random data are loaded; and page data, stored in the page buffer circuit on which the random data are loaded and the partial page data are reloaded, is programmed on a target page. Accordingly, data input time and program time can be reduced. |
