| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that, when a belt-like nitride semiconductor stacking structure 110 having a principal plane of an m-plane is broken along a linear groove 104, two or more side surfaces may be formed on the lateral side thereof, and this decreases the fabrication efficiency of a triangular prismatic m-plane nitride semiconductor light-emitting diode.SOLUTION: An angle X of 75 degrees or above and 105 degrees or below is formed between a linear groove 104 and one cleavage axis selected from an a-axis or a c-axis. Then, a belt-like nitride semiconductor stacking structure 110 is broken along the linear groove 104 to form a quadratic prismatic nitride semiconductor stacking structure 120. Subsequently, the quadratic prismatic nitride semiconductor stacking structure 120 is broken along other linear groove 106 to obtain a triangular prismatic m-plane nitride semiconductor light emitting diode 130. |
